دیتاشیت PMV45EN,215
مشخصات دیتاشیت
نام دیتاشیت |
PMV45EN
|
حجم فایل |
441.633
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
14
|
مشخصات
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Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
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Packaging:
Cut Tape (CT)
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Part Status:
Obsolete
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FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
-
Current - Continuous Drain (Id) @ 25°C:
5.4A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
42mOhm @ 2A, 10V
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Vgs(th) (Max) @ Id:
2V @ 1mA
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Gate Charge (Qg) (Max) @ Vgs:
9.4nC @ 10V
-
Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 30V
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FET Feature:
-
-
Power Dissipation (Max):
280mW (Tj)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
TO-236AB (SOT23)
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
PMV4
-
detail:
N-Channel 30V 5.4A (Tc) 280mW (Tj) Surface Mount TO-236AB (SOT23)